Work

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Year: 2020

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2020.3025983

Authors: Andrea Minetto, Bernd Deutschmann, Nicola Modolo, Arianna Nardo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Gerhard Prechtl, Sebastien Sicre, Oliver Haberlen

Institutions: Graz University of Technology, Infineon Technologies (Austria), University of Padua

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3092199139

FWCI: 6.241

Cites: 20

Cited by: 67

Related to: 10