Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
Year: 2020
Type: article
Abstract: Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H–1T′ phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H–1T′ phase transition, which imposes a 3% directional elongation of the topological 1T′ phase with respect to the semiconducting 2H. We note that only a few percent 2H–1T′ phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.
Source: ACS Nano
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, U.S. Department of Energy, European Commission, Agence Nationale de la Recherche, National Natural Science Foundation of China, Korea Atomic Energy Research Institute, National Research Council of Science and Technology, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research, H2020 Future and Emerging Technologies
Awards: G1051554911, G155958390, Materials Research Science and Engineering Center, G1973303758, G2567800894, Advanced Nano-Engineering to Transport Heat in Ultra-thin Mmembranes, Hybrid Optomechanical Technologies, G3010527862, G3340084831, Detection of 2D material novel physics within a universal NANO-opto-electro-mechanical plateform, G434337789, G4965623377, 圆环艾里脉冲光束驱动的高次谐波空间相位匹配特性及其控制研究, Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides, G6580087526, EAGER: Enabling Quantum Leap: Exceptional-point Topological Polaritonics for Room-temperature Quantum Logic, Hybrid Optomechanical Technologies, MAGnetism InduCed VALLEY polarization in large scale 2D materials, ER46608: TMS-DEFECT MODELING BEYOND THE DENSITY FUNCTIONAL THEORY; PI-SHENGBAI ZHANG
OpenAlex ID: W3092711242