Year: 2021
Type: article
Abstract: Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices, such as magnetic memory, logic, oscillator, and neuromorphic computing. Here, we describe and experimentally demonstrate a strategy for the realization of a spin torque gate magnetic sensor with an extremely simple structure by exploiting the longitudinal field dependence of the spin torque driven magnetization switching. Unlike most magnetoresistance sensors, which require a delicate magnetic bias to achieve a linear response to the external field, the spin torque gate sensor can achieve the same without any magnetic bias, which greatly simplifies the sensor structure. Furthermore, by driving the sensor using an ac current, the dc offset is automatically suppressed, which eliminates the need for a bridge or compensation circuit. We verify the concept using the ${\mathrm{W}\mathrm{Te}}_{2}/\mathrm{Ti}/(\mathrm{Co},\mathrm{Fe})\mathrm{B}$ trilayer and demonstrate that the sensor can work linearly in the range of \ifmmode\pm\else\textpm\fi{}3--10 Oe with negligible dc offset.
Source: Physical Review Applied
Authors: Hang Xie, Xin Chen, Ziyan Luo, Yihong Wu
Institutions: National University of Singapore, Central South University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: G2528414758, G5663267407
OpenAlex ID: W3093363004