Work

Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer

Year: 2020

Type: article

Abstract: In this work, the electrical property of Au/graphene oxide/p-InP hetero-structure has been evaluated byI–VandC–Vmeasurements in dark and illuminated conditions (visible light). The diode exhibited significant rectifying behavior, thus indicating the heterojunction-type diode. The key electrical parameters of heterojunction diode including ideality factor (n), series resistance (Rs), shunt resistance (Rsh), and barrier height (Фb) are estimated fromI–Vdata based on the theory of thermionic emission. The modified Norde and Cheung’s methods were utilized to evaluate the electrical parameters and compared the results. The current conduction mechanism at different voltage regions ofI–Vhas also been investigated. The variation of 1/C2versus voltage signifies linearity at high frequency (1 MHz), indicating that the type of heterojunction can be abrupt. The experimental outcomes of this study revealed that the performance of heterojunction diode in dark is considerably good as compared to the illumination condition with respect to the lower values ofФb,n,Rs, and interface state density (Nss).

Source: Nanomanufacturing and Metrology

DOI: 10.1007/s41871-020-00078-z

Authors: Dasaradha Rao Lambada, Shuming Yang, Yiming Wang, Peirui Ji, Shareen Shafique, Fei Wang

Institution: Xi'an Jiaotong University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $1,990

Funders: National Outstanding Youth Science Fund Project of National Natural Science Foundation of China, National Key Research and Development Program of China, Key Research and Development Projects of Shaanxi Province