Artificial Neural Networks: Dual‐Gated MoS2 Memtransistor Crossbar Array (Adv. Funct. Mater. 45/2020)
Year: 2020
Type: article
Abstract: In article number 2003683, Mark C. Hersam and co-workers present dual-gated MoS2 memtransistors, which enable a crossbar architecture that solves two long-standing issues in neuromorphic computing hardware. In particular, one gate suppresses crossbar sneak currents while the second gate allows tuning of the synaptic learning rate. This gate-tunability provides a dynamic means of achieving linear and symmetric potentiation and depression, thereby facilitating efficient implementation of artificial neural networks.
Source: Advanced Functional Materials
Authors: Hong‐Sub Lee, Vinod K. Sangwan, William A. Gaviria Rojas, Hadallia Bergeron, Hye Yun Jeong, Jiangtan Yuan, Katherine Su, Mark C. Hersam
Institutions: Northwestern University, Kangwon National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3096358836