Year: 2005
Type: article
Abstract: Epitaxial n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300K carrier concentration and mobility were about ns∼1016cm−3 and 440cm2∕Vs, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 430cm2∕Vs was calculated at 300K. The temperature dependence of the mobility for an undoped film is calculated and agrees favorably well with experimental data if physical parameters are chosen so as to approach those. In the experimental “mobility versus concentration” curve, unusual phenomenon was observed, i.e., mobilities at ns∼5×1018cm−3 are significantly smaller than those at higher densities above ∼1020cm−3. It is qualitatively explained in terms of electron-plasmon interaction.
Source: Applied Physics Letters
DOI: 10.1063/1.1991994
Authors: T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, M. Kawasaki
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2033265799