Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface
Year: 2013
Type: article
Abstract: The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators.
Source: Applied Physics Letters
DOI: 10.1063/1.4792237
Authors: Handong Li, Lei Gao, Hui Li, Gaoyun Wang, Jiang Wu, Zhihua Zhou, Zhiming Wang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2084903685