Year: 2016
Type: article
Abstract: In this article we have investigated the electrical control of the exchange coupling (J) between donor-bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We found that the asymmetric 2P–1P system provides a highly tunable exchange curve with mitigated J-oscillation, in which 5 orders of magnitude change in the exchange coupling can be achieved using a modest range of electric field (3 MV/m) for ~15-nm qubit separation. Compared with the barrier gate control of exchange in the Kane qubit, the detuning gate design reduces the gate density by a factor of ~2. By combining large-scale atomistic tight-binding method with a full configuration interaction technique, we captured the full two-electron spectrum of gated donors, providing state-of-the-art calculations of exchange energy in 1P–1P and 2P–1P qubits.
Source: npj Quantum Information
DOI: 10.1038/npjqi.2016.8
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,290
OpenAlex ID: W3099438951