Work

InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

Year: 2020

Type: article

Source: Chalmers Research (Chalmers University of Technology)

Author: Eunjung Cha

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3100516957

FWCI: 0.172

Cites:

Cited by: 2

Related to: 10