Year: 2008
Type: article
Abstract: We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
Source: Applied Physics Letters
DOI: 10.1063/1.2938693
Authors: Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2059740357