High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity
Year: 2016
Type: article
Abstract: Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two‐terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This study reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin‐polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. The results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.
Source: Advanced Materials Interfaces
Authors: Xiao Shen, Timothy J. Pennycook, David Hernandez‐Martin, Ana Pérez, Yevgeniy S. Puzyrev, Yaohua Liu, Suzanne G. E. te Velthuis, John W. Freeland, Padraic Shafer, Chenhui Zhu, Maria Varela, Carlos Leon, Zouhair Sefrioui, Jacobo Santamaria, Sokrates T. Pantelides
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funders: National Science Foundation, U.S. Department of Energy, Vanderbilt University, Ministerio de Ciencia e Innovación, Office of Science, Engineering and Physical Sciences Research Council, Division of Materials Research, Basic Energy Sciences, Argonne National Laboratory, Oak Ridge National Laboratory
Awards: G102163711, G107546177, G1286236842, G1286251239, G1313983767, G1434927308, G1505794299, G1664757510, G1863003419, G222768804, G2618837358, G262962599, G2638771445, G2887060908, G30714459, G3075337988, G3083819904, G3327601824, G340565428, G3589692066, G3967535168, G426311843, G42916606, G4501827968, G4564791563, G498139845, G513797252, PHYSICS OF COMPLEX MATERIALS SYSTEMS THROUGH THEORY AND MICROSCOPY/EELS, PHYSICS OF COMPLEX MATERIALS SYSTEMS THROUGH THEORY AND MICROSCOPY/EELS, G5387317844, G5648016710, G568895953, G5694675723, G5904151224, G5910536577, G6284100910, G650090426, G660579501, G6652958823, G6848031779, G6918803902, PHYSICS OF COMPLEX MATERIALS SYSTEMS THROUGH THEORY AND MICROSCOPY/EELS, G7368700025, G7583137537, G7703655993, G8286507625, Multiscale theory of memristive materials systems, G969889393
OpenAlex ID: W1822887018