Work

Segmented ion-trap fabrication using high precision stacked wafers

Year: 2019

Type: article

Abstract: We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.

Source: Repository for Publications and Research Data (ETH Zurich)

DOI: 10.3929/ethz-b-000375020

Authors: Ragg, Simon G., Decaroli, Chiara, Lutz, Thomas, Home, Jonathan

Institutions: ETH Zurich, Institute for Quantum Electronics

Language: English

Topic: Quantum Information and Cryptography

Subfield: Artificial Intelligence

Field: Computer Science

Domain: Physical Sciences

Open Access status: green

Funder: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Awards: Multi-qubit transport gates and integrated control for scalable ion trap quantum processing, Parity check circuits in scalable ion trap quantum computers