Work

Residual Stress Characterization of Thick PECVD TEOS Film for Power MEMS Applications

Year: 2000

Type: conference-paper

Abstract: This paper reports residual stress characterization of thick oxide films.Engineering approaches for creating lo-20pm oxide films without cracking and wafer bow were demonstrated.

Source: Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)

DOI: 10.31438/trf.hh2000.77

Authors: X. Zhang, R. Ghodssi, K.-S. Chen, A.A. Ayon, S.M. Spearing

Institutions: Massachusetts Institute of Technology, University of Maryland, College Park, National Cheng Kung University

Language: English

Topic: Advanced MEMS and NEMS Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Science Council, Defense Advanced Research Projects Agency, Army Research Office

OpenAlex ID: W3116210972

FWCI: 1.914

Cites: 3

Cited by: 10

Related to: 10