Work

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

Year: 2020

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0031484

Authors: George Seryogin, Fikadu Alema, Nicholas Valente, Houqiang Fu, Erich Steinbrunner, Adam T. Neal, Shin Mou, Aaron Fine, Andrei Osinsky

Institutions: United States Air Force Research Laboratory, Iowa State University, Wright State University, Wright-Patterson Air Force Base, Agnitron Technology (United States), U.S. Air Force Research Laboratory Materials and Manufacturing Directorate

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Office of Naval Research, Air Force Office of Scientific Research

Awards: G1803745395, G6381710726, G7256377199

OpenAlex ID: W3116464833

FWCI: 12.57

Cites: 45

Cited by: 143

Related to: 10