Work

Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications

Year: 2020

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.0c02939

Authors: Wai Yuen Fu, Hoi Wai Choi

Institution: University of Hong Kong

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Research Grants Council, University Grants Committee

Awards: Strain Induction in InGaN/GaN Quantum Well: A Critical Step Toward Monolithic Full-color Emission, Tuning Resonance in GaN Optical Cavities by Mechanical Stretching and Compression

OpenAlex ID: W3117420899

FWCI: 0.981

Cites: 34

Cited by: 7

Related to: 10