Work

Failure Induced by a Progressive Defect in Memory Device

Year: 2016

Type: conference-paper

Source: Proceedings - International Symposium for Testing and Failure Analysis

DOI: 10.31399/asm.cp.istfa2016p0082

Authors: Incheol Nam, Hodong Ryu, Jinseon Kim, Kwangwon Lee, Daesun Kim, Hongsun Hwang, Sangjae Rhee, Kangyong Cho, Gyoyoung Jin

Institution: Samsung Electronics (South Korea)

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3117632036

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