A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Year: 2021
Type: preprint
Abstract: We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
Source: arXiv (Cornell University)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W3128950520