Work

Channel current analysis of GaN HEMTs with source sense pin in DC/DC boost converters

Year: 2021

Type: article

Source: Journal of Power Electronics

DOI: 10.1007/s43236-020-00215-3

Authors: Buket Turan Azizoglu, Abdul Balikci, Eyup Akpinar, Enes Durbaba

Institution: Dokuz Eylül University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3130178083

FWCI:

Cites: 28

Cited by:

Related to: 10