Work

Atomic-level charge transport mechanism in gate-tunable anti-ambipolar van der Waals heterojunctions

Year: 2021

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0023379

Authors: Kuang-Chung Wang, Daniel Valencia, James Charles, Alex Henning, Megan E. Beck, Vinod K. Sangwan, Lincoln J. Lauhon, Mark C. Hersam, Tillmann Kubis

Institutions: Purdue University West Lafayette, Northwestern University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Materials Research Science and Engineering Center, University of Nebraska

Awards: PRAC - Accelerating Nano-scale Transistor Innovation, Sustained-Petascale In Action: Blue Waters Enabling Transformative Science And Engineering, G543273319, EFRI 2-DARE: Scalable Growth and Fabrication of Anti-Ambipolar Heterojunction Devices

OpenAlex ID: W3131045773

FWCI: 0.76

Cites: 50

Cited by: 12

Related to: 10