Work

Achieving over 15% Efficiency in Solution-Processed Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells via a Heterogeneous-Formation-Induced Benign p–n Junction Interface

Year: 2021

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.1c00781

Authors: Da-Seul Kim, Gi Soon Park, Byungwoo Kim, Soohyun Bae, Sang Yeun Park, Hyung-Suk Oh, Ung Lee, Doo-Hyun Ko, Jihyun Kim, Byoung Koun Min

Institutions: Korea University, Korea Institute of Science and Technology, Kyung Hee University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Ministry of Science and ICT, South Korea, Korea Institute of Energy Technology Evaluation and Planning

Award: G6796383681

OpenAlex ID: W3133796725

FWCI: 1.248

Cites: 43

Cited by: 25

Related to: 10