Work

Ballistic two-dimensional lateral heterojunction bipolar transistor

Year: 2021

Type: article

Abstract: The authors explore the concept of a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides through self-consistent simulations of electrostatics and quantum transport.

Source: Physical Review Research

DOI: 10.1103/physrevresearch.3.023158

Authors: Leonardo Lucchesi, Gaetano Calogero, Gianluca Fiori, Giuseppe Iannaccone

Institution: University of Pisa

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,625

Funders: European Commission, Ministero dell’Istruzione, dell’Università e della Ricerca

Awards: G7053777680, Quantum Engineering for Machine Learning

OpenAlex ID: W3137328281

FWCI: 0.217

Cites: 24

Cited by: 5

Related to: 10