Work

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Year: 2021

Type: article

Source: Reports on Progress in Physics

DOI: 10.1088/1361-6633/abf1d4

Authors: Yangyang Wang, Shiqi Liu, Qiuhui Li, Ruge Quhe, Chen Yang, Ying Guo, Xiuying Zhang, Yuanyuan Pan, Jingzhen Li, Han Zhang, Lin Xu, Bowen Shi, Hao Tang, Ying Li, Jinbo Yang, Zhiyong Zhang, Lin Xiao, Feng Pan, Jing Lu

Institutions: China Academy of Space Technology, Peking University, Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications, Shaanxi University of Technology, China University of Petroleum, East China, State Key Laboratory of Heavy Oil, Northwest University, Collaborative Innovation Center of Quantum Matter

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Fundamental Research Funds for the Central Universities

Awards: G3932251847, G6775469550, G730963279

OpenAlex ID: W3137742563

FWCI: 9.921

Cites: 263

Cited by: 199

Related to: 10