Work

A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

Year: 2021

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2021.3067796

Authors: Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Institutions: University of Padua, Graz University of Technology, Infineon Technologies (Austria)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3139430276

FWCI: 3.582

Cites: 22

Cited by: 49

Related to: 10