Work

Modelling of anomalous boron diffusion in Si'SiGe HBTs

Year: 1993

Type: other

Source: ePrints Soton (University of Southampton)

Authors: H.J. Gregory, M. Mouis, D. Mathiot, David J. Robbins, John L. Glasper, P. Ashburn, S. Nigrin

Language: French

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3145950379

Cites:

Cited by:

Related to: 20