Forming-free nitrogen-doped AlO X RRAM with sub-μA programming current
Year: 2011
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: Wanki Kim, Sung Il Park, Zhiping Zhang, Young Yang-Liauw, Deepak Sekar, H.‐S. Philip Wong, S.S. Wong
Institution: Stanford University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2117764183