Work

Strategies for High-Performance Amorphous Indium–Gallium–Zinc Oxide Schottky Contact via Defect-Induced Physical Interface Modification

Year: 2021

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.1c00104

Authors: Donggun Lee, Jun-Woo Park, Kyungho Kim, Heebae Kim, Youn Sang Kim

Institutions: Seoul National University, Samsung (South Korea), Samsung Display (South Korea), Advanced Institute of Convergence Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G3420939415

OpenAlex ID: W3152685067

FWCI: 0.626

Cites: 33

Cited by: 13

Related to: 10