6.5-kV Full-SiC Power Module (HV100) with SBD-embedded SiC-MOSFETs
Year: 2018
Type: conference-paper
Authors: Junichi Nakashima, Akihisa Fukumoto, Yoshiko Obiraki, Takeshi Oi, Y. Mitsui, Hiroshi Nakatake, Yoshihiko Toyoda, Akinori Nishizawa, Koutarou Kawahara, Shiro Hino, Hiroshi Watanabe, Tetsu Negishi, Shinichi Iura
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3154500398
