Work

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Year: 2021

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202008761

Authors: Yong Yan, Juehan Yang, Juan Du, Xiaomei Zhang, Yue‐Yang Liu, Congxin Xia, Zhongming Wei

Institutions: Henan Normal University, Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences, Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Henan Normal University, National Natural Science Foundation of China, Beijing National Laboratory for Molecular Sciences

Awards: G1401949110, 二维SnS2材料电子结构和光电性质的研究, G4086474178, G5820786585, G5892677677, G7277552611

OpenAlex ID: W3156563548

FWCI: 4.709

Cites: 86

Cited by: 91

Related to: 10