Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cells
Year: 2020
Type: dissertation
Abstract: Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar CellsDielectric surface passivation for solar cell technology have been extensively research previously, and one of the main breakthroughs within this field is atomic layer deposited AlOx.AlOx have been successful for two reasons; firstly, the high degree of chemical passivation, and secondly, the high concentration of fixed negative charges, leading to a high degree of fieldeffect passivation as well.
Author: Eirik Koch Jubskås
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W3156743697