Work

Device Engineering Strategy of Zr-Doped HfOx Ferroelectric Memory for Unconventional Computing Applications

Year: 2021

Type: conference-paper

Source: IEEE International Symposium on Circuits and Systems proceedings

DOI: 10.1109/iscas51556.2021.9401627

Author: Jiyong Woo

Institution: Kyungpook National University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3159827692

FWCI: 1.585

Cites: 22

Cited by: 4

Related to: 10