Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates
Year: 2021
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/5.0044531
Authors: Alexander Y. Polyakov, Vladimir I. Nikolaev, Sergey A. Tarelkin, Alexei I. Pechnikov, Sergey I. Stepanov, Andrey E. Nikolaev, Ivan V. Shchemerov, Eugene B. Yakimov, Nikolay V. Luparev, Mikhail S. Kuznetsov, Anton A. Vasilev, Anastasiya I. Kochkova, Marina I. Voronova, Mikhail P. Scheglov, Jihyun Kim, Stephen J. Pearton
Institutions: National University of Science and Technology, Ioffe Institute, All-Russian Research Institute for Optical and Physical Measurements, Technological Institute for Superhard and Novel Carbon Materials, Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials, Korea University, University of Florida
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G3017155742, G772299097
OpenAlex ID: W3163805554