Year: 2021
Type: conference-paper
Abstract: A Ferroelectric Analog Non-Volatile Memory based on a WOxelectrode and ferroelectric HfZrO4layer is fabricated at a low thermal budget (~375°C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <; 10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
Institutions: IBM Research - Zurich, ETH Zurich, Lumiphase (Switzerland)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Horizon 2020 Framework Programme
Awards: G4358551651, G8235759583
OpenAlex ID: W3163845704