Dual slot-mode NOEM phase shifter
Year: 2021
Type: article
Abstract: Photonic system component counts are increasing rapidly, particularly in CMOS-compatible silicon photonics processes. Large numbers of cascaded active photonic devices are difficult to implement when accounting for constraints on area, power dissipation, and response time. Plasma dispersion and the thermo-optic effect, both available in CMOS-compatible silicon processes, address a subset of these criteria. With the addition of a few back-end-of-line etch processing steps, silicon photonics platforms can support nano-opto-electro-mechanical (NOEM) phase shifters. Realizing NOEM phase shifters that operate at CMOS-compatible voltages (≤ 1.2 V) and with low insertion loss remains a challenge. Here, we introduce a novel NOEM phase shifter fabricated alongside 90 nanometer transistors that imparts 5.63 radians phase shift at 1.08 volts bias over an actuation length of 25μm with an insertion loss of less than 0.04 dB and 3 dB bandwidth of 0.26 MHz.
Source: Optics Express
DOI: 10.1364/oe.423949
Authors: Reza Baghdadi, Michael Gould, Shashank Gupta, Mykhailo Tymchenko, Darius Bunandar, Carl Ramey, Nicholas C. Harris
Institution: Lightmatter (United States)
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W3163879263