Work

An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

Year: 2021

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw51353.2021.9439601

Authors: Solomon Amsalu Chekol, Felix Cuppers, Rainer Waser, Susanne Hoffmann-Eifert

Institutions: Forschungszentrum Jülich, Jülich Aachen Research Alliance, RWTH Aachen University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung

Awards: G2822299883, G4928488920

OpenAlex ID: W3169213567

FWCI: 2.355

Cites: 18

Cited by: 6

Related to: 10