Work

Low switching loss diode of 600V RC-IGBT with new contact structure

Year: 2021

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.23919/ispsd50666.2021.9452306

Authors: Kenji Suzuki, Takuya Yoshida, Yuki Haraguchi, Hidenori Koketsu, Atsushi Narazaki

Institution: Mitsubishi Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W3171139320

FWCI: 1.57

Cites: 6

Cited by: 6

Related to: 10