Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
Work
Year: 2021
Type: article
Source: Optik
Institutions University of Science and Technology Liaoning, State Key Laboratory on Integrated Optoelectronics, Jilin University
Cites: 16
Cited by: 12
Related to: 10
FWCI: 0.737
Citation percentile (by year/subfield): 43.82
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: closed