Work

InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration

Year: 2021

Type: conference-paper

Abstract: We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections ( = 1550 nm) suitable for heterogeneous integration with SiNx PICs. The structures exhibit desired electrical performance and support lasing.

Source: Conference on Lasers and Electro-Optics

DOI: 10.1364/cleo_si.2021.sth2h.1

Authors: Christopher Heidelberger, Christos T. Santis, Jason J. Plant, Erin M. Morissette, Dave Kharas, Reuel B. Swint, Amnon Yariv, Paul W. Juodawlkis

Institutions: MIT Lincoln Laboratory, Massachusetts Institute of Technology, California Institute of Technology

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W3194322916

FWCI: 0.792

Cites: 6

Cited by: 2

Related to: 10