High optoelectronic performance of a local-back-gate ReS 2 /ReSe 2 heterojunction phototransistor with hafnium oxide dielectric
Year: 2021
Type: article
Source: Nanoscale
DOI: 10.1039/d1nr02728j
Institutions: Fudan University, State Key Laboratory of ASIC and System
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3195908483