Year: 2022
Type: article
Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300-mm complementary metal oxide semiconductor (CMOS) fabrication technology that is already widely used in the semiconductor industry, while maintaining high readout and gate fidelities. We demonstrate the detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the strong spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6\phantom{\rule{0.2em}{0ex}}\text{GHz}/\sqrt{\text{Hz}}$.
Source: Physical Review Applied
Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Institut Néel, Université Grenoble Alpes, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, CEA Grenoble, Institut de Recherche Interdisciplinaire de Grenoble
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funder: Agence Nationale de la Recherche
OpenAlex ID: W3202151292