Work

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance

Year: 2021

Type: article

Abstract: As human activities expand into naturally or man‐made radiation‐prone environment, the need for radiation‐hardened (Rad‐Hard) electronic hardware surges. The state‐of‐the‐art silicon‐based and 2D materials‐based Rad‐Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here, few‐layer MoS2 Rad‐Hard field‐effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics are presented. The MoS2 PSE‐FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s−1 and can be repaired with a moderate thermal annealing at 100 °C for 5 min. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS2 PSE‐FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal–oxide–semiconductor‐like MoS2 PSE‐inverters are built and show high radiation tolerance as well. Furthermore, the feasibility of wafer‐scale Rad‐Hard PSE‐inverter array is demonstrated using chemical vapor deposition grown monolayer MoS2. These studies uncover the potential of 2D materials‐based PSE devices in future Rad‐Hard integrated circuits.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202100619