Work

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Year: 2021

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2021.114255

Authors: A. Nardo, C. De Santi, C. Koller, C. Ostermaier, I. Daumiller, G. Meneghesso, E. Zanoni, M. Meneghini

Institutions: University of Padua, Infineon Technologies (Austria)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Ministero dell’Istruzione, dell’Università e della Ricerca, Electronic Components and Systems for European Leadership, Horizon 2020

Awards: Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap, G4701793695

OpenAlex ID: W3206293236

FWCI: 1.84

Cites: 16

Cited by: 34

Related to: 10