Year: 2007
Type: article
Abstract: An ab initio study of Ge nanowires (GeNWs) oriented along [110] and [111] directions is performed for H-passivated and non-passivated wires with diameters up to 3.5 nm. GeNWs grown in the [110] direction present a direct energy gap and in the [111] direction the energy gap is indirect, even for small diameters. The highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gap scales with diameter, d , as and d −1.1 for the [110] and [111] growth directions, respectively. Consequently for the same diameter GeNWs grown in the [110] direction present a smaller gap than nanowires grown in the [111] direction.
Source: Nanotechnology
Authors: J T Arantes, A Fazzio
Institution: Universidade de São Paulo
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2087134825