Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation
Year: 2021
Type: article
Source: IEEE Electron Device Letters
Authors: Dongyoung Kim, Woongje Sung
Institution: SUNY Polytechnic Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Vehicle Technologies Program
Award: G1620455975
OpenAlex ID: W3208905512