Work

A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout Circuit Sensitivity and Area

Year: 2021

Type: conference-paper

Source: European Solid-State Circuits Conference (ESSCIRC)

DOI: 10.1109/esscirc53450.2021.9567807

Authors: Peter Deaville, Bonan Zhang, Lung-Yen Chen, Naveen Verma

Institution: Princeton University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3209341468

FWCI: 10.83

Cites: 6

Cited by: 37

Related to: 10