Year: 2021
Type: article
Abstract: Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
Source: Physical Review Letters
Institutions: Fudan University, State Key Laboratory of Surface Physics, Center for High Pressure Science and Technology Advanced Research, Center for High Pressure Science & Technology Advanced Research, Northwestern Polytechnical University, Chinese Academy of Sciences, Collaborative Innovation Center of Advanced Microstructures, Institute of Deep-Sea Science and Engineering
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: Natural Science Foundation of Shanghai, Research Fund for Young Star of Science and Technology in Shaanxi Province, National Natural Science Foundation of China, Chinese Academy of Sciences, Northwestern Polytechnical University, China Postdoctoral Science Foundation, Office of Science, National Key Research and Development Program of China, Natural Science Basic Research Program of Shaanxi Province
OpenAlex ID: W3210399001