Work

B- and Al- Doped Delta Layers in Si Using Halogen-Based Precursors.

Year: 2020

Type: conference-paper

DOI: 10.2172/1831356

Authors: S. Baek, A. Farzani, M. Radue, Quinn Campbell, K. Dwyer, Andrew Baczewski, Y. Mo, Shashank Misra, R. Butera

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W3214752166

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