Work

Growth modulation of atomic layer deposition of HfO 2 by combinations of H 2 O and O 3 reactants

Year: 2021

Type: article

Source: Dalton Transactions

DOI: 10.1039/d1dt03465k

Authors: Byeong Guk Ko, Chi Thang Nguyen, Bonwook Gu, Mohammad Rizwan Khan, Kunwoo Park, Hongjun Oh, Jungwon Park, Bonggeun Shong, Han-Bo-Ram Lee

Institutions: Incheon National University, Seoul National University, Hongik University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Incheon National University, Ministry of Trade, Industry and Energy, Korea Semiconductor Research Consortium

OpenAlex ID: W3217505172

FWCI: 0.72

Cites: 74

Cited by: 23

Related to: 10