Thermoelectric Properties of p-type La2-xMxCuO4 (M = Ca, Sr, Ba) Thin Films Prepared by Pulsed Laser Deposition Method
Year: 2006
Type: article
Abstract: La2-xMxCuO4 (LMCO:M=Ba, Sr, Ca) thin films were deposited on SrTiO3 (100) substrates by pulsed laser deposition method. From the X-ray diffraction (XRD) patterns, the SCCO (Sm2-xCexCuO4) thin films on the SrTiO3(STO) substrate were confirmed that c-axis was parallel to the substrate normal and in-plane alignment was cube-on-cube for the substrate. The Seebeck coefficient and the resistivity decreased with the increasing an amount of M-element substitution. We calculated the power factor from these values and found that the highest value of 1.2 mW/mK2 at 330 K was achieved by the La2-xSrxCO thin film with x = 0.02. This value was almost equal to the reported value in Bi2Te3 film at room temperature. High power factor values in low temperature demonstrate the potential of RE2CuO4 system for the thermoelectric device.
Authors: Yutaka Yoshida, Tomoki Yoshikawa, Yusuke Ichino, Yoshiaki Takai
Institution: Nagoya University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W358191848