Year: 2021
Type: article
Abstract: We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi2N4as channel material, using the first principles quantum transport simulations. The devices’ performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.
Authors: Keshari Nandan, Barun Ghosh, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan
Institution: Indian Institute of Technology Kanpur
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Alexander von Humboldt-Stiftung
OpenAlex ID: W4205409337