Work

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Year: 2022

Type: article

Source: Journal of Luminescence

DOI: 10.1016/j.jlumin.2022.118741

Authors: Rui Li, Chengxin Wang, Kaiju Shi, Changfu Li, Shangda Qu, Xiangang Xu, Ziwu Ji

Institutions: Shandong University, Inspur (China)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: 基于能带工程/应力调控的高效InGaN基红光LED的研究, 发光均匀、低热堆积的高性能InGaN基绿光LD的研究

OpenAlex ID: W4206299743

FWCI: 0.273

Cites: 39

Cited by: 3

Related to: 10